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Crocus


Crocus Technology is an early-stage developer of MRAM technology for dense, non-volatile, high-speed, scalable memories. Its MRAM technology was conceived in the Grenoble-based Spintec laboratory, a world leading R&D center in Spintronics affiliated with two famous French labs, CEA and CNRS. Crocus Technology MRAM technology is covered by a comprehensive patent portfolio. The company licenses its technology for standalone and embedded chip applications in a wide variety of telecommunication, networking, storage, computing and handheld applications. Crocus is backed by VC firms AGF Private Equity, CDC Innovation, NanoDimension, Sofinnova Partners, Sofinnova Ventures, and Ventech and has operations in Grenoble, France, and Sunnyvale, California.

 

Crocus’ proprietary MRAM technology solves all the well-known problems encountered in earlier MRAM implementations. The company’s technology has demonstrated on silicon its stability, reliability, data retention, endurance, and scalability, while exhibiting high speed, low power dissipation, and excellent resistance to external perturbation. Crocus also recently qualified its complete manufacturing environment for the development and rapid prototyping of MRAM. These achievements have positioned Crocus as one of the very few companies in the world capable of fully integrating advanced MRAM onto CMOS. With this additional funding, Crocus will complete the technology development necessary to support its initial product introduction.

 

Crocus recently announced that it has raised a combined 11.5 million Euros in its second round of funding. This round hailed full participation from Crocus’ current investors: AGF Private Equity, CDC Innovation, NanoDimension, Sofinnova, and Ventech, raising 8.5M€. The company was also awarded an additional 3M€ in funding from OSEO, a French agency supporting advanced R&D programs, for a total of 11.5M€ to further the development and bring into production its proprietary MRAM technology as a scalable high density non volatile memory solution with high speed, infinite endurance and low power.



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